SIA483 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 10.6A/12A PPAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Vgs (Max) [Min] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Technology | Vgs(th) (Max) @ Id [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | Surface Mount | PowerPAK® SC-70-6 | 30 V | 2.5 V | P-Channel | 10.6 A 12 A | 16 V | -20 V | 20 mOhm | 3.4 W 17.9 W | -55 °C | 150 °C | 26 nC | PowerPAK® SC-70-6 | MOSFET (Metal Oxide) | |||
Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | Surface Mount | PowerPAK® SC-70-6 | 30 V | P-Channel | 12 A | 21 mOhm | 3.5 W 19 W | -55 °C | 150 °C | 45 nC | PowerPAK® SC-70-6 | MOSFET (Metal Oxide) | 2.2 V | 1550 pF | 20 V |