Specification	STD10N60M2

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	85 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STD10N60M2 Series

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in DPAK package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type
STMicroelectronics STD10N60M2	400 pF	25 V	4 V	600 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	85 W	MOSFET (Metal Oxide)	10 V	600 V	Surface Mount	13.5 nC	150 °C	-55 °C	7.5 A	DPAK	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3709	$ 1.73
Newark	Each	1	$ 1.70
		10	$ 1.15
		100	$ 0.81
		500	$ 0.66
		1000	$ 0.61
		2500	$ 0.56
		10000	$ 0.55

Description

General part information

STD10N60M2 Series

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.