Discrete Semiconductor Products
NTMFS7D8N10GTWG
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 110 A, 0.0076 OHM, PQFN, SURFACE MOUNT
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Discrete Semiconductor Products
NTMFS7D8N10GTWG
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 110 A, 0.0076 OHM, PQFN, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMFS7D8N10GTWG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A, 110 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6180 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 187 W, 3 W |
| Rds On (Max) @ Id, Vgs | 7.6 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.44 | |
| 10 | $ 2.94 | |||
| 100 | $ 2.08 | |||
| 500 | $ 1.71 | |||
| 1000 | $ 1.61 | |||
| Digi-Reel® | 1 | $ 4.44 | ||
| 10 | $ 2.94 | |||
| 100 | $ 2.08 | |||
| 500 | $ 1.71 | |||
| 1000 | $ 1.61 | |||
| Tape & Reel (TR) | 3000 | $ 1.61 | ||
| ON Semiconductor | N/A | 1 | $ 1.48 | |
Description
General part information
NTMFS7D8N10G Series
This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain a wide safe operating area for ruggedness and robustness.
Documents
Technical documentation and resources