Specification	FDMS6681Z

Current - Continuous Drain (Id) @ 25°C	49 A, 21.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	241 nC
Input Capacitance (Ciss) (Max) @ Vds	10380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 73 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

FDMS6681Z Series

P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS6681Z	4.5 V 10 V	3.2 mOhm	P-Channel	8-PQFN (5x6)	10380 pF	-55 °C	150 °C	Surface Mount	8-PowerTDFN	2.5 W 73 W	3 V	21.1 A 49 A	25 V	241 nC	MOSFET (Metal Oxide)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

FDMS6681Z is not recommended for new design. Please apply NTMFS005P03P8ZT1G as a replacement.