Discrete Semiconductor Products

SI7540DP-T1-GE3

Obsolete

MOSFET N/P-CH 12V 7.6A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 12V 7.6A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7540DP-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5.7 A, 7.6 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Configuration	Power - Max [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Feature	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7540DP-T1-GE3	N and P-Channel	1.4 W	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	12 V	1.5 V	Logic Level Gate	PowerPAK® SO-8 Dual	17 nC	Surface Mount	5.7 A 7.6 A	17 mOhm	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI7540ADP-T1-GE3	N and P-Channel	3.5 W	PowerPAK® SO-8 Dual		20 V	1.4 V		PowerPAK® SO-8 Dual		Surface Mount	9 A 12 A	28 mOhm	-55 °C	150 °C	1310 pF	48 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 12V 7.6A, 5.7A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources