SI7540 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 12V 7.6A PPAK SO8
| Part | Configuration | Power - Max [Max] | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Feature | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N and P-Channel | 1.4 W | PowerPAK® SO-8 Dual | MOSFET (Metal Oxide) | 12 V | 1.5 V | Logic Level Gate | PowerPAK® SO-8 Dual | 17 nC | Surface Mount | 5.7 A 7.6 A | 17 mOhm | -55 °C | 150 °C | ||
Vishay General Semiconductor - Diodes Division | N and P-Channel | 3.5 W | PowerPAK® SO-8 Dual | 20 V | 1.4 V | PowerPAK® SO-8 Dual | Surface Mount | 9 A 12 A | 28 mOhm | -55 °C | 150 °C | 1310 pF | 48 nC |