Discrete Semiconductor Products

SI4447DY-T1-E3

LTB

MOSFET P-CH 40V 3.3A 8SO

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Discrete Semiconductor Products

LTB

MOSFET P-CH 40V 3.3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4447DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	805 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs(th) (Max) @ Id [Max]
Vishay General Semiconductor - Diodes Division SI4447ADY-T1-GE3	970 pF	8-SOIC	38 nC	P-Channel	-55 °C	150 °C	4.5 V 10 V	45 mOhm	Surface Mount	MOSFET (Metal Oxide)	40 V	7.2 A	20 V	8-SOIC	3.9 mm	0.154 in	4.2 W	2.5 V
Vishay General Semiconductor - Diodes Division SI4447DY-T1-E3	805 pF	8-SOIC	14 nC	P-Channel	-55 °C	150 °C	10 V 15 V	72 mOhm	Surface Mount	MOSFET (Metal Oxide)	40 V	3.3 A	16 V	8-SOIC	3.9 mm	0.154 in	1.1 W		2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SOIC

Technical documentation and resources