SI4447 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 40V 7.2A 8SO
| Part | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 970 pF | 8-SOIC | 38 nC | P-Channel | -55 °C | 150 °C | 4.5 V 10 V | 45 mOhm | Surface Mount | MOSFET (Metal Oxide) | 40 V | 7.2 A | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 4.2 W | 2.5 V | |
Vishay General Semiconductor - Diodes Division | 805 pF | 8-SOIC | 14 nC | P-Channel | -55 °C | 150 °C | 10 V 15 V | 72 mOhm | Surface Mount | MOSFET (Metal Oxide) | 40 V | 3.3 A | 16 V | 8-SOIC | 3.9 mm | 0.154 in | 1.1 W | 2.2 V |