Discrete Semiconductor Products

BYV255V-200

Obsolete

DIODE MODULE GP 200V 100A ISOTOP

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Discrete Semiconductor Products

Obsolete

DIODE MODULE GP 200V 100A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	BYV255V-200

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	ISOTOP
Reverse Recovery Time (trr)	80 ns
Speed	500 ns, 200 mA
Supplier Device Package	ISOTOP®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	850 mV

Part	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Operating Temperature - Junction [Max]	Speed	Diode Configuration	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Technology
STMicroelectronics BYV255V-200	100 A	200 V	80 ns	ISOTOP®	150 °C	200 mA 500 ns	2 Independent	ISOTOP	100 µA	850 mV	Chassis Mount	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 23.38

General part information

Diode Array 2 Independent 200 V 100A Chassis Mount ISOTOP

Technical documentation and resources