Discrete Semiconductor Products

IRFZ24STRLPBF

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MOSFET N-CH 60V 17A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 17A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ24STRLPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.7 W, 60 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division IRFZ24SPBF	4 V	25 nC	TO-263 (D2PAK)	3.7 W 60 W	Surface Mount	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRFZ24PBF-BE3	4 V	25 nC	TO-220AB	60 W	Through Hole	60 V		100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	TO-220-3
Vishay General Semiconductor - Diodes Division IRFZ24STRRPBF	4 V	25 nC	TO-263 (D2PAK)	3.7 W 60 W	Surface Mount	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRFZ24STRLPBF	4 V	25 nC	D2PAK	3.7 W 60 W	Surface Mount	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRFZ24	4 V	25 nC	TO-220AB	60 W	Through Hole	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	TO-220-3
Vishay General Semiconductor - Diodes Division IRFZ24PBF	4 V	25 nC	TO-220AB	60 W	Through Hole	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 17A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK

Technical documentation and resources

No documents available