IRFZ24 Series

Catalog

MOSFET N-CH 60V 17A TO263

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division IRFZ24SPBF	4 V	25 nC	TO-263 (D2PAK)	3.7 W 60 W	Surface Mount	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRFZ24PBF-BE3	4 V	25 nC	TO-220AB	60 W	Through Hole	60 V		100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	TO-220-3
Vishay General Semiconductor - Diodes Division IRFZ24STRRPBF	4 V	25 nC	TO-263 (D2PAK)	3.7 W 60 W	Surface Mount	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRFZ24STRLPBF	4 V	25 nC	D2PAK	3.7 W 60 W	Surface Mount	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division IRFZ24	4 V	25 nC	TO-220AB	60 W	Through Hole	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	TO-220-3
Vishay General Semiconductor - Diodes Division IRFZ24PBF	4 V	25 nC	TO-220AB	60 W	Through Hole	60 V	10 V	100 mOhm	20 V	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	17 A	TO-220-3