Discrete Semiconductor Products

SI4166DY-T1-GE3

Active

MOSFET N-CH 30V 30.5A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 30.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4166DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2730 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3 W, 6.5 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type
Vishay General Semiconductor - Diodes Division SI4166DY-T1-GE3	20 V	2730 pF	3 W 6.5 W	MOSFET (Metal Oxide)	8-SOIC	65 nC	4.5 V 10 V	Surface Mount	-55 °C	150 °C	30.5 A	8-SOIC	3.9 mm	0.154 in	2.4 V	30 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

Technical documentation and resources