SI4166 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 30.5A 8SO
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 2730 pF | 3 W 6.5 W | MOSFET (Metal Oxide) | 8-SOIC | 65 nC | 4.5 V 10 V | Surface Mount | -55 °C | 150 °C | 30.5 A | 8-SOIC | 3.9 mm | 0.154 in | 2.4 V | 30 V | N-Channel |