Discrete Semiconductor Products
TIP137
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, 100 V, 2 W, 8 A, 1000 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
TIP137
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, 100 V, 2 W, 8 A, 1000 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | TIP137 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TIP137 Series
The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is TIP137.
Also TIP135 is a PNP type.
Documents
Technical documentation and resources