Discrete Semiconductor Products

SIHU4N80AE-GE3

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MOSFET N-CH 800V 4.3A IPAK

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Discrete Semiconductor Products

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MOSFET N-CH 800V 4.3A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHU4N80AE-GE3

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	622 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251AB, TO-251-3 Long Leads
Rds On (Max) @ Id, Vgs	1.27 Ohm
Supplier Device Package	IPAK (TO-251)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay General Semiconductor - Diodes Division SIHU4N80AE-GE3	622 pF	IPAK TO-251-3 Long Leads TO-251AB	30 V	4 V	IPAK (TO-251)	32 nC	10 V	800 V	-55 °C	150 °C	4.3 A	N-Channel	MOSFET (Metal Oxide)	1.27 Ohm	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)

Technical documentation and resources