SIHU4 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 800V 4.3A IPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 622 pF | IPAK TO-251-3 Long Leads TO-251AB | 30 V | 4 V | IPAK (TO-251) | 32 nC | 10 V | 800 V | -55 °C | 150 °C | 4.3 A | N-Channel | MOSFET (Metal Oxide) | 1.27 Ohm | Through Hole |