Specification	SCT4045DEHRC11

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1460 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	115 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	TO-247N
Vgs (Max) [Max]	21 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	4.8 V

SCT4045DEHR Series

750V, 34A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Vgs(th) (Max) @ Id	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Power Dissipation (Max) [Max]	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor SCT4045DEHRC11	4.8 V	TO-247-3	N-Channel	63 nC	175 °C	AEC-Q101	18 V	34 A	750 V	21 V	-4 V	Through Hole	115 W	Automotive	TO-247N	59 mOhm	1460 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	274	$ 11.70
	Tube	1	$ 5.98
		10	$ 4.08
		450	$ 3.69
Newark	Each	1	$ 8.79
		10	$ 7.09
		25	$ 6.71
		50	$ 6.41
		100	$ 6.15
		250	$ 5.84
		900	$ 5.74

Description

General part information

SCT4045DEHR Series

AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

SCT4045DEHRC11

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SCT4045DEHRC11

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Technical Specifications

SCT4045DEHR Series

Pricing

Description

SCT4045DEHR Series

Documents

Technical Data Sheet EN

Importance of Probe Calibration When Measuring Power: Deskew

Oscillation countermeasures for MOSFETs in parallel

Notes for Calculating Power Consumption:Static Operation

Judgment Criteria of Thermal Evaluation

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

How to Use LTspice&reg; Models: Tips for Improving Convergence

What Is Thermal Design

Anti-Whisker formation

How to Use LTspice&reg; Models

How to Use PLECS Models

5kW Inverter Circuit Using 4th Generation SiC MOSFETs

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

How to Use PSIM Models

Impedance Characteristics of Bypass Capacitor

Basics of Thermal Resistance and Heat Dissipation

5kW High-Efficiency Fan-less Inverter

Two-Resistor Model for Thermal Simulation

Gate-source voltage behaviour in a bridge configuration

Precautions for Thermal Resistance of Insulation Sheet

Condition of Soldering

Types and Features of Transistors

Application Note for SiC Power Devices and Modules

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

What is a Thermal Model? (SiC Power Device)

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

SiC MOSFET Layout Design Considerations

How to Use Thermal Models

Notes for Temperature Measurement Using Thermocouples

Calculating Power Loss from Measured Waveforms

Calculation of Power Dissipation in Switching Circuit

How to measure the oscillation occurs between parallel-connected devices

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Compliance of the ELV directive

Precautions When Measuring the Rear of the Package with a Thermocouple

Taping Information

About Export Administration Regulations (EAR)

Precautions during gate-source voltage measurement for SiC MOSFET

Snubber circuit design methods for SiC MOSFET

800V Three-Phase Output LLC DC/DC Resonant Converter

Design Method for Comparator-less Miller Clamp Circuits

Thermal Resistance Measurement Method for SiC MOSFET

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Measurement Method and Usage of Thermal Resistance RthJC

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

PCB Layout Thermal Design Guide

θ<sub>JA</sub> and Ψ<sub>JT</sub>

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Basics and Design Guidelines for Gate Drive Circuits

Gate-Source Voltage Surge Suppression Methods

Solving the challenges of driving SiC MOSFETs with new packaging developments

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Part Explanation

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

About Flammability of Materials

How to Suppress the Parallel Drive Oscillation in SiC Modules

Method for Monitoring Switching Waveform

Notes for Temperature Measurement Using Forward Voltage of PN Junction

4 Steps for Successful Thermal Designing of Power Devices

Package Dimensions

SCT4045DEHR Series

How to Use LTspice® Models: Tips for Improving Convergence

How to Use LTspice® Models