Specification	FDZ1323NZ

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	24 nC
Input Capacitance (Ciss) (Max) @ Vds	2055 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLCSP, 6-XFBGA
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	6-WLCSP (1.3x2.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

FDZ1323NZ Series

Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power - Max [Max]	Configuration	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
ON Semiconductor FDZ1323NZ	13 mOhm	Surface Mount	20 V	500 mW	2 N-Channel (Dual) Common Drain	6-XFBGA WLCSP	-55 °C	150 °C	MOSFET (Metal Oxide)	2055 pF	6-WLCSP (1.3x2.3)	Logic Level Gate	24 nC	10 A	1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.43
		10	$ 1.17
		100	$ 0.91
		500	$ 0.77
		1000	$ 0.63
		2000	$ 0.59
	Digi-Reel®	1	$ 1.43
		10	$ 1.17
		100	$ 0.91
		500	$ 0.77
		1000	$ 0.63
		2000	$ 0.59
	Tape & Reel (TR)	5000	$ 0.56
		10000	$ 0.54
Newark	Each (Supplied on Full Reel)	3000	$ 0.71
		6000	$ 0.64
		12000	$ 0.58
		18000	$ 0.56
		30000	$ 0.55
ON Semiconductor	N/A	1	$ 0.35

Description

General part information

FDZ1323NZ Series

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on an advanced PowerTrench®process with state of the art"low pitch" WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, lowgate charge and low rS1S2(on).