Discrete Semiconductor Products

SIRA10BDP-T1-GE3

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MOSFET N-CH 30V 30A/60A PPAK SO8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 30A/60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA10BDP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30 A, 60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 43 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIRA10BDP-T1-GE3	36.2 nC	3.6 mOhm	MOSFET (Metal Oxide)	30 V	PowerPAK® SO-8	Surface Mount	5 W 43 W	-55 °C	150 °C	PowerPAK® SO-8	-16 V 20 V	N-Channel	4.5 V 10 V	1710 pF	30 A 60 A	2.4 V

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General part information

N-Channel 30 V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources