SIRA10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 30A/60A PPAK SO8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 36.2 nC | 3.6 mOhm | MOSFET (Metal Oxide) | 30 V | PowerPAK® SO-8 | Surface Mount | 5 W 43 W | -55 °C | 150 °C | PowerPAK® SO-8 | -16 V 20 V | N-Channel | 4.5 V 10 V | 1710 pF | 30 A 60 A | 2.4 V |