Specification	FGL60N100BNTD

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	275 nC
IGBT Type	NPT and Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	180 W
Reverse Recovery Time (trr)	1.2 µs
Supplier Device Package	TO-264-3
Td (on/off) @ 25°C	630 ns
Td (on/off) @ 25°C	140 ns
Test Condition	60 A, 15 V, 600 V, 51 Ohm
Vce(on) (Max) @ Vge, Ic	2.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1000 V

FGL60N100BNTD Series

1000V, 60A, NPT Trench IGBT

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Gate Charge	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	IGBT Type	Current - Collector Pulsed (Icm)	Power - Max [Max]
ON Semiconductor FGL60N100BNTDTU	TO-264-3 TO-264AA	1000 V	60 A	1.2 µs	275 nC	TO-264-3	-55 °C	150 °C	Through Hole	2.9 V	15 V 51 Ohm 60 A 600 V	630 ns	140 ns	NPT and Trench	120 A	180 W
ON Semiconductor FGL60N100BNTD	TO-264-3 TO-264AA	1000 V	60 A	1.2 µs	275 nC	TO-264-3	-55 °C	150 °C	Through Hole	2.9 V	15 V 51 Ohm 60 A 600 V	630 ns	140 ns	NPT and Trench	120 A	180 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGL60N100BNTD Series

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.