FGL60N100BNTD Series

1000V, 60A, NPT Trench IGBT

Catalog

1000V, 60A, NPT Trench IGBT

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Gate Charge	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	IGBT Type	Current - Collector Pulsed (Icm)	Power - Max [Max]
ON Semiconductor FGL60N100BNTDTU	TO-264-3 TO-264AA	1000 V	60 A	1.2 µs	275 nC	TO-264-3	-55 °C	150 °C	Through Hole	2.9 V	15 V 51 Ohm 60 A 600 V	630 ns	140 ns	NPT and Trench	120 A	180 W
ON Semiconductor FGL60N100BNTD	TO-264-3 TO-264AA	1000 V	60 A	1.2 µs	275 nC	TO-264-3	-55 °C	150 °C	Through Hole	2.9 V	15 V 51 Ohm 60 A 600 V	630 ns	140 ns	NPT and Trench	120 A	180 W

Catalog

1000V, 60A, NPT Trench IGBT

Key Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat)= 2.5 V @ IC= 60A

• High Input Impedance

• Built-in Fast Recovery Diode

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.