Power MOSFET, N Channel, 600 V, 46 A, 71 mOhm, TO-247LL, 3 Pins, Through Hole

Discrete Semiconductor Products

STGWA50IH65DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, 650 V, 50 A SOFT SWITCHING IH SERIES IN A TO-247 LONG LEADS PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +11

Discrete Semiconductor Products

STGWA50IH65DF

Active

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, 650 V, 50 A SOFT SWITCHING IH SERIES IN A TO-247 LONG LEADS PACKAGE

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DocumentsDatasheet Product Change Notice EN +11

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA50IH65DF

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	158 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	300 W
Supplier Device Package	TO-247 Long Leads
Switching Energy	284 µJ
Td (on/off) @ 25°C	-/260ns
Test Condition	400 V, 22 Ohm, 15 V, 50 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

STGWA50 Series

Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package

Part	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Gate Charge	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Supplier Device Package	IGBT Type	Test Condition	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [x]
STMicroelectronics STGWA50M65DF2	2.1 V	375 W	TO-247-3	150 nC	42 ns 130 ns	162 ns	TO-247 Long Leads	Trench Field Stop	6.8 Ohm 15 V 50 A 400 V	150 A	650 V	1.57 mJ 880 µJ	Through Hole	175 °C	-55 °C	80 A
STMicroelectronics STGWA50IH65DF	2 V	300 W	TO-247-3	158 nC			TO-247 Long Leads	Trench Field Stop	15 V 22 Ohm 50 A 400 V	150 A	650 V	284 µJ	Through Hole	175 °C	-55 °C	100 A	-/260ns
STMicroelectronics STGWA50HP65FB2	2 V	272 W	TO-247-3	151 nC		140 ns	TO-247 Long Leads	Trench Field Stop	4.7 Ohm 15 V 50 A 400 V	150 A	650 V	580 µJ	Through Hole	175 °C	-55 °C	86 A		115 ns	-
STMicroelectronics STGWA50H65DFB2	2 V	272 W	TO-247-3	151 nC		92 ns	TO-247 Long Leads	Trench Field Stop	4.7 Ohm 15 V 50 A 400 V	150 A	650 V	580 µJ 910 µJ	Through Hole	175 °C	-55 °C	86 A				28 ns 115 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	540	$ 4.88
	Tube	1	$ 5.40
		10	$ 3.60
		100	$ 2.57
		600	$ 2.10
		1200	$ 2.03

Description

General part information

STGWA50 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

STGWA50IH65DF

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STGWA50IH65DF

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Technical Specifications

STGWA50 Series

Pricing

Description

STGWA50 Series

Documents

Datasheet

Product Change Notice EN

Technical Data Sheet EN

AN4694

TN1225

TN1378

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AN4544

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TN1224

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STGWA50 Series