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TO-39
Discrete Semiconductor Products

MNS2N3501P

Active
Microchip Technology

NPN SILICON AMPLIFIER 100V TO 150V, 0.3A TO 0.5A

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TO-39
Discrete Semiconductor Products

MNS2N3501P

Active
Microchip Technology

NPN SILICON AMPLIFIER 100V TO 150V, 0.3A TO 0.5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMNS2N3501P
Current - Collector (Ic) (Max) [Max]300 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
QualificationMIL-PRF-19500/366
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 61$ 11.65
Microchip DirectN/A 1$ 11.65
100$ 10.82
500$ 10.40
1000$ 9.82
NewarkEach 1$ 11.65
100$ 10.82
500$ 10.40

Description

General part information

MNS2N3501P-Transistor-PIND Series

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources