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STWA20N95DK5
Discrete Semiconductor Products

STWA20N95DK5

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STMicroelectronics

N-CHANNEL 950 V, 275 MOHM TYP., 18 A MDMESH DK5 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA20N95DK5
Discrete Semiconductor Products

STWA20N95DK5

Active
STMicroelectronics

N-CHANNEL 950 V, 275 MOHM TYP., 18 A MDMESH DK5 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTWA20N95DK5
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50.7 nC
Input Capacitance (Ciss) (Max) @ Vds1600 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs330 mOhm
Supplier Device PackageTO-247 Long Leads
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 4.05

Description

General part information

STWA20N95DK5 Series

These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters.