Specification	FDMA520PZ

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1645 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.4 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

FDMA520PZ Series

P-Channel PowerTrench® MOSFET -20V, -7.3A, 30mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Technology
ON Semiconductor FDMA520PZ	7.3 A	-55 °C	150 °C	12 V	20 nC	1645 pF	30 mOhm	2.5 V 4.5 V	1.5 V	6-MicroFET (2x2)	Surface Mount	20 V	2.4 W	P-Channel	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMA520PZ Series

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.