Discrete Semiconductor Products

SIHG47N60EF-GE3

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MOSFET N-CH 600V 47A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 600V 47A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG47N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	225 nC
Input Capacitance (Ciss) (Max) @ Vds	4854 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	379 W
Rds On (Max) @ Id, Vgs	67 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHG47N60AE-GE3	65 mOhm	182 nC	3600 pF	313 W	N-Channel	43 A	TO-247-3	MOSFET (Metal Oxide)	Through Hole	TO-247AC	4 V	30 V	10 V	600 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHG47N60EF-GE3	67 mOhm	225 nC	4854 pF		N-Channel	47 A	TO-247-3	MOSFET (Metal Oxide)	Through Hole	TO-247AC	4 V	30 V	10 V	600 V	-55 °C	150 °C	379 W
Vishay General Semiconductor - Diodes Division SIHG47N65E-GE3	72 mOhm		5682 pF	417 W	N-Channel	47 A	TO-247-3	MOSFET (Metal Oxide)	Through Hole	TO-247AC	4 V	30 V	10 V	650 V	-55 °C	150 °C		273 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 47A (Tc) 379W (Tc) Through Hole TO-247AC

Technical documentation and resources