SIHG47 Series

Catalog

MOSFET N-CH 600V 43A TO247AC

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHG47N60AE-GE3	65 mOhm	182 nC	3600 pF	313 W	N-Channel	43 A	TO-247-3	MOSFET (Metal Oxide)	Through Hole	TO-247AC	4 V	30 V	10 V	600 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHG47N60EF-GE3	67 mOhm	225 nC	4854 pF		N-Channel	47 A	TO-247-3	MOSFET (Metal Oxide)	Through Hole	TO-247AC	4 V	30 V	10 V	600 V	-55 °C	150 °C	379 W
Vishay General Semiconductor - Diodes Division SIHG47N65E-GE3	72 mOhm		5682 pF	417 W	N-Channel	47 A	TO-247-3	MOSFET (Metal Oxide)	Through Hole	TO-247AC	4 V	30 V	10 V	650 V	-55 °C	150 °C		273 nC