Discrete Semiconductor Products

NVVR26A120M1WSS

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SILICON CARBIDE (SIC) MODULE - ELITESIC POWER MODULE FOR TRACTION INVERTER, SINGLE-SIDE COOLING, 2.6MΩ RDS_ON, 1200V, HALF-BRIDGE, STRAIGHT POWER TABS

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DocumentsDatasheet Package Drawing-MODHN-AHPM15−CDI AUTOMOTIVE MODULE

Discrete Semiconductor Products

NVVR26A120M1WSS

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ON Semiconductor

SILICON CARBIDE (SIC) MODULE - ELITESIC POWER MODULE FOR TRACTION INVERTER, SINGLE-SIDE COOLING, 2.6MΩ RDS_ON, 1200V, HALF-BRIDGE, STRAIGHT POWER TABS

Deep-Dive with AI

DocumentsDatasheet Package Drawing-MODHN-AHPM15−CDI AUTOMOTIVE MODULE

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NVVR26A120M1WSS

Configuration	2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	1.75 µC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	31700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	62 mm
Package / Case	2.441 in
Package / Case	15-PowerDIP Module
Power - Max [Max]	1 kW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	AHPM15-CDI
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	3.2 V

NVVR26A120M1WSS Series

Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Package / Case	Package / Case	Configuration	Mounting Type	Qualification	Technology	Grade
ON Semiconductor NVVR26A120M1WSS	31700 pF	3.2 V	1200 V	1.2 kV	2.6 mOhm	AHPM15-CDI	1.75 µC	-40 C	175 °C	1 kW	62 mm	2.441 in	15-PowerDIP Module	2 N-Channel (Half Bridge)	Through Hole	AEC-Q101	Silicon Carbide (SiC)	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 842.51
		10	$ 829.05
ON Semiconductor	N/A	1	$ 408.03

Description

General part information

NVVR26A120M1WSS Series

The NVVR26A120M1WSS is part of the EliteSiC power module family for Hybrid and Electric Vehicle (HEV) traction inverter application. The module consists of two 1200V SiC MOSFETs in a Half-Bridge configuration. The EliteSiC chipset utilizes the M1 SiC technology fromonsemiin providing high current density, robust short circuit protection, high block voltage, and high operating temperature to deliver class-leading performance in EV traction applications.