NVVR26A120M1WSS Series

Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs

Manufacturer: ON Semiconductor

Catalog

Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	Package / Case	Package / Case	Configuration	Mounting Type	Qualification	Technology	Grade
ON Semiconductor NVVR26A120M1WSS	31700 pF	3.2 V	1200 V	1.2 kV	2.6 mOhm	AHPM15-CDI	1.75 µC	-40 C	175 °C	1 kW	62 mm	2.441 in	15-PowerDIP Module	2 N-Channel (Half Bridge)	Through Hole	AEC-Q101	Silicon Carbide (SiC)	Automotive

Catalog

Silicon Carbide (SiC) Module - EliteSiC Power Module for Traction Inverter, Single-Side Cooling, 2.6mΩ Rds_on, 1200V, Half-Bridge, Straight Power Tabs

Key Features

• Half-Bridge Single Side Cooling

• Ultra-Low Stray Inductance

• Ultra-Low Rds_on

• Tj_max = 175°C continuous operation

• Automotive Grade EliteSiC MOSFET Technology

• Sintering Technology for Die Attach

Description

The NVVR26A120M1WSS is part of the EliteSiC power module family for Hybrid and Electric Vehicle (HEV) traction inverter application. The module consists of two 1200V SiC MOSFETs in a Half-Bridge configuration. The EliteSiC chipset utilizes the M1 SiC technology fromonsemiin providing high current density, robust short circuit protection, high block voltage, and high operating temperature to deliver class-leading performance in EV traction applications.