FDT3612
ActivePOWER MOSFET, N CHANNEL, 100 V, 3.7 A, 0.12 OHM, SOT-223, SURFACE MOUNT
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FDT3612
ActivePOWER MOSFET, N CHANNEL, 100 V, 3.7 A, 0.12 OHM, SOT-223, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDT3612 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.7 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [x] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 632 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | SOT-223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.07 | |
| 10 | $ 0.67 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.34 | |||
| 1000 | $ 0.31 | |||
| 2000 | $ 0.28 | |||
| Digi-Reel® | 1 | $ 1.07 | ||
| 10 | $ 0.67 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.34 | |||
| 1000 | $ 0.31 | |||
| 2000 | $ 0.28 | |||
| Tape & Reel (TR) | 4000 | $ 0.26 | ||
| 8000 | $ 0.24 | |||
| 12000 | $ 0.23 | |||
| 20000 | $ 0.23 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.31 | |
| 6000 | $ 0.28 | |||
| 12000 | $ 0.27 | |||
| 18000 | $ 0.25 | |||
| 30000 | $ 0.24 | |||
| ON Semiconductor | N/A | 1 | $ 0.24 | |
Description
General part information
FDT3612 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Documents
Technical documentation and resources