FDT3612 Series

100V N-Channel PowerTrench® MOSFET 3.7A, 120mΩ

Catalog

100V N-Channel PowerTrench® MOSFET 3.7A, 120mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor FDT3612	-55 °C	150 °C	Surface Mount	6 V 10 V	632 pF	TO-261-4 TO-261AA	20 V	3.7 A	SOT-223-4	3 W	120 mOhm	MOSFET (Metal Oxide)	100 V	20 nC	N-Channel	4 V

Catalog

100V N-Channel PowerTrench® MOSFET 3.7A, 120mΩ

Key Features

• 3.7 A, 100 V

• RDS(on)= 120 mΩ@ VGS= 10 V

• RDS(on)= 130 mΩ @ VGS= 6 V

• Fast switching speed

• Low gate charge (14nC typical)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability in awidely used surface mount package

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.