Discrete Semiconductor Products
FDMS3615S
ActiveON Semiconductor
ASYMMETRIC DUAL N-CHANNEL MOSFET POWERTRENCH<SUP>®</SUP> POWER STAGE, 25V
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Discrete Semiconductor Products
FDMS3615S
ActiveON Semiconductor
ASYMMETRIC DUAL N-CHANNEL MOSFET POWERTRENCH<SUP>®</SUP> POWER STAGE, 25V
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS3615S |
|---|---|
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Current - Continuous Drain (Id) @ 25°C | 18 A, 16 A |
| Drain to Source Voltage (Vdss) | 25 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm |
| Supplier Device Package | Power56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FDMS3615S Series
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Documents
Technical documentation and resources