FDMS3615S Series

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Catalog

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Part	Supplier Device Package	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	FET Feature	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMS3615S	Power56	1 W	27 nC	Surface Mount	25 V	1765 pF	MOSFET (Metal Oxide)	16 A 18 A	-55 °C	150 °C	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	8-PowerTDFN	2.5 V	5.8 mOhm

Catalog

Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V

Key Features

• Low RDS(on)

• Low Inductance Packaging

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.