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TO-263
Discrete Semiconductor Products

FDB38N30U

Active
ON Semiconductor

N-CHANNEL UNIFET<SUP>TM</SUP> ULTRA FRFET<SUP>TM</SUP> MOSFET 300V, 38A, 120M / REEL ROHS COMPLIANT: YES

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TO-263
Discrete Semiconductor Products

FDB38N30U

Active
ON Semiconductor

N-CHANNEL UNIFET<SUP>TM</SUP> ULTRA FRFET<SUP>TM</SUP> MOSFET 300V, 38A, 120M / REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB38N30U
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]73 nC
Input Capacitance (Ciss) (Max) @ Vds3340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]313 W
Rds On (Max) @ Id, Vgs [Max]120 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.94
10$ 2.76
100$ 1.97
Digi-Reel® 1$ 3.94
10$ 2.76
100$ 1.97
Tape & Reel (TR) 800$ 1.57
1600$ 1.55
NewarkEach (Supplied on Full Reel) 1$ 1.86
3000$ 1.78
6000$ 1.66
12000$ 1.54
18000$ 1.48
30000$ 1.46
ON SemiconductorN/A 1$ 1.36

Description

General part information

FDB38N30U Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTMMOSFET has much superior body diode reverse recovery performance. Its trris less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.