FDB38N30U Series

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 300V, 38A, 120mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 300V, 38A, 120mΩ, D2PAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [x]	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
ON Semiconductor FDB38N30U	-55 °C	150 °C	38 A	Surface Mount	MOSFET (Metal Oxide)	3340 pF	120 mOhm	5 V	TO-263 (D2PAK)	73 nC	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 V	30 V	10 V	313 W

Catalog

Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 300V, 38A, 120mΩ, D2PAK

Key Features

• RDS(on)= 120mΩ ( Max.)@ VGS= 10V, ID= 19A

• Low gate charge ( Typ. 56nC)

• Low Crss( Typ. 55pF)

• 100% avalanche tested

• RoHS Compliant

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTMMOSFET has much superior body diode reverse recovery performance. Its trris less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.