Specification	2SC3646S-TD-E

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	500 mW
Supplier Device Package	PCP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

2SC3646 Series

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Frequency - Transition	Transistor Type	Operating Temperature	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor 2SC3646S-TD-E	400 mV	100 nA	500 mW	TO-243AA	100 hFE	100 V	PCP	120 MHz	NPN	150 °C	Surface Mount	1 A
ON Semiconductor 2SC3646T-TD-E	400 mV	100 nA	500 mW	TO-243AA	100 hFE	100 V	PCP	120 MHz	NPN	150 °C	Surface Mount	1 A
ON Semiconductor 2SC3646T-P-TD-E	400 mV	100 nA	500 mW	TO-243AA		100 V	PCP	120 MHz	NPN		Surface Mount	1 A	200 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Adoption of FBET, MBIT processes

High breakdown voltage and large current capacity

Fast switching speed

Technical documentation and resources