
Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC3646T-P-TD-E |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 hFE |
| Frequency - Transition | 120 MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | PCP |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2SC3646 Series
Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 500 mW Surface Mount PCP
Documents
Technical documentation and resources
No documents available