Discrete Semiconductor Products

FQB27N25TM

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N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Active

N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	FQB27N25TM

Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	417 W
Rds On (Max) @ Id, Vgs	131 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

N-Channel UltraFET<sup>®</sup> 250V, 25.5A, 131mΩ

Part	Package / Case	Power Dissipation (Max) [Max]	Grade	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Qualification	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor FQB27N25TM-F085	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	417 W	Automotive	N-Channel	-55 °C	150 °C	10 V	Surface Mount	MOSFET (Metal Oxide)	TO-263 (D2PAK)	10 V 49 nC	30 V	AEC-Q101	131 mOhm	250 V	5 V	1800 pF
ON Semiconductor FQB27N25TM	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB			N-Channel	-55 °C	150 °C	10 V	Surface Mount	MOSFET (Metal Oxide)	TO-263 (D2PAK)	10 V 49 nC	30 V		131 mOhm	250 V	5 V	1800 pF	417 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	231	$ 1.30

General part information

N-Channel UltraFET®250 V, 25.5 A, 131 mΩ

Technical documentation and resources

No documents available