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TO-263
Discrete Semiconductor Products

FQB27N25TM-F085

Obsolete
ON Semiconductor

TRANS MOSFET N-CH 250V 25.5A 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

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TO-263
Discrete Semiconductor Products

FQB27N25TM-F085

Obsolete
ON Semiconductor

TRANS MOSFET N-CH 250V 25.5A 3-PIN(2+TAB) D2PAK T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB27N25TM-F085
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 V, 49 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]417 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs131 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FQB27N25TM_F085 Series

N-Channel UltraFET®250 V, 25.5 A, 131 mΩ