Beta

⌘K

TO-3PFM

Discrete Semiconductor Products

RGCL80TK60DGC11

Active

Rohm Semiconductor

LOW VCE(SAT)TYPE, 600V 40A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsExample of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials How to Use the Thermal Resistance and Thermal Characteristics Parameters +43

TO-3PFM

Discrete Semiconductor Products

RGCL80TK60DGC11

Active

Rohm Semiconductor

LOW VCE(SAT)TYPE, 600V 40A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsExample of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials How to Use the Thermal Resistance and Thermal Characteristics Parameters +43

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGCL80TK60DGC11

Current - Collector (Ic) (Max) [Max]	35 A
Gate Charge	98 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	57 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-3PFM
Switching Energy	1.11 mJ, 1.68 mJ
Td (on/off) @ 25°C	227 ns, 53 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	302	$ 3.46
	Tube	1	$ 1.87
		30	$ 1.50
		120	$ 1.23
		510	$ 1.11
Newark	Each	1	$ 3.17
		10	$ 2.93
		25	$ 2.75

Description

General part information

RGCL80 Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

How to Use the Thermal Resistance and Thermal Characteristics Parameters

How to Use LTspice® Models

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Method for Monitoring Switching Waveform

Schematic Design & Verification

Reliability Test Result

Manufacturing Data

Condition of Soldering

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

PCB Layout Thermal Design Guide

What is a Thermal Model? (IGBT)

Part Explanation

Application Note

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Taping Information

Package Information

About Flammability of Materials

Environmental Data

Explanation for Marking

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Notes for Calculating Power Consumption:Static Operation

Basics of Thermal Resistance and Heat Dissipation

About Export Administration Regulations (EAR)

Export Information

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Precautions for Thermal Resistance of Insulation Sheet

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

RGCL80TK60D Data Sheet

Judgment Criteria of Thermal Evaluation

Anti-Whisker formation

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

What Is Thermal Design

Notes for Temperature Measurement Using Thermocouples

4 Steps for Successful Thermal Designing of Power Devices

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Compliance of the ELV directive

Environmental Data

How to Create Symbols for PSpice Models

Types and Features of Transistors

Application Note

Package Dimensions

Package Information

Inner Structure

Package Information

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Precautions When Measuring the Rear of the Package with a Thermocouple

Moisture Sensitivity Level

Package Information

RGCL80 Series

Low VCE(sat)Type, 600V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Switching Energy	Test Condition	Package / Case	IGBT Type	Td (on/off) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)
Rohm Semiconductor RGCL80TK60DGC11	TO-3PFM	600 V	Through Hole	57 W	98 nC	1.8 V	1.11 mJ 1.68 mJ	10 Ohm 15 V 40 A 400 V	SC-93-3 TO-3PFM	Trench Field Stop	53 ns 227 ns	175 °C	-40 °C	35 A	58 ns
Rohm Semiconductor RGCL80TS60DGC11	TO-247N	600 V	Through Hole	148 W	98 nC	1.8 V	1.11 mJ 1.68 mJ	10 Ohm 15 V 40 A 400 V	TO-247-3	Trench Field Stop	53 ns 227 ns	175 °C	-40 °C	65 A	58 ns