Discrete Semiconductor Products

RGCL80TS60DGC11

NRND

IGBT, 65 A, 1.4 V, 148 W, 600 V, TO-247N, 3 PINS

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Discrete Semiconductor Products

NRND

IGBT, 65 A, 1.4 V, 148 W, 600 V, TO-247N, 3 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	RGCL80TS60DGC11

Current - Collector (Ic) (Max) [Max]	65 A
Gate Charge	98 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	148 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-247N
Switching Energy	1.68 mJ, 1.11 mJ
Td (on/off) @ 25°C	53 ns, 227 ns
Test Condition	10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Low VCE(sat)Type, 600V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Td (on/off) @ 25°C	Gate Charge	Supplier Device Package	Test Condition	Vce(on) (Max) @ Vge, Ic	Switching Energy	Power - Max [Max]	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]
Rohm Semiconductor RGCL80TK60DGC11	53 ns 227 ns	98 nC	TO-3PFM	10 Ohm 15 V 40 A 400 V	1.8 V	1.11 mJ 1.68 mJ	57 W	58 ns	35 A	Through Hole	SC-93-3 TO-3PFM	600 V	Trench Field Stop	-40 C	175 °C
Rohm Semiconductor RGCL80TS60DGC11	53 ns 227 ns	98 nC	TO-247N	10 Ohm 15 V 40 A 400 V	1.8 V	1.11 mJ 1.68 mJ	148 W	58 ns	65 A	Through Hole	TO-247-3	600 V	Trench Field Stop	-40 C	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	450	$ 2.45
Newark	Each	1	$ 2.68

General part information

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Technical documentation and resources