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SOT8002-1
Discrete Semiconductor Products

PXN8R3-30QLJ

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Nexperia USA Inc.

MOSFETS 30 V, N-CHANNEL TRENCH MOSFET

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SOT8002-1
Discrete Semiconductor Products

PXN8R3-30QLJ

Active
Nexperia USA Inc.

MOSFETS 30 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN8R3-30QLJ
Current - Continuous Drain (Id) @ 25°C11.4 A, 31 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]15.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]760 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)12.5 W, 1.7 W
Rds On (Max) @ Id, Vgs8.3 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.53
10$ 0.46
25$ 0.43
100$ 0.34
250$ 0.32
500$ 0.27
1000$ 0.21
Digi-Reel® 1$ 0.53
10$ 0.46
25$ 0.43
100$ 0.34
250$ 0.32
500$ 0.27
1000$ 0.21
N/A 383$ 0.50
Tape & Reel (TR) 3000$ 0.16
MouserN/A 1$ 0.40
10$ 0.25
100$ 0.22
250$ 0.20
3000$ 0.17
6000$ 0.16
9000$ 0.16

Description

General part information

PXN8R3-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.