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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 150 °C | -55 °C | 8-PowerVDFN | N-Channel | 30 V | Surface Mount | MOSFET (Metal Oxide) | 11.4 A 31 A | 1.7 W 12.5 W | 2.2 V | 15.9 nC | 4.5 V 10 V | 760 pF | MLPAK33 | 8.3 mOhm |