Discrete Semiconductor Products

SQS966ENW-T1_GE3

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MOSFET 2N-CH 60V 6A PWRPAK1212

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 6A PWRPAK1212

Technical Specifications

Parameters and characteristics for this part

Specification	SQS966ENW-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	8.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	572 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8W Dual
Power - Max [Max]	27.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	PowerPAK® 1212-8W Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Supplier Device Package	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Grade
Vishay General Semiconductor - Diodes Division SQS966ENW-T1_GE3	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual	AEC-Q101	572 pF	MOSFET (Metal Oxide)	60 V	8.8 nC	2 N-Channel (Dual)	6 A	27.8 W	Surface Mount Wettable Flank	2.5 V	-55 °C	175 ░C	36 mOhm	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual

Technical documentation and resources