SQS966 Series

Catalog

MOSFET 2N-CH 60V 6A PWRPAK1212

Part	Package / Case	Supplier Device Package	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Grade
Vishay General Semiconductor - Diodes Division SQS966ENW-T1_GE3	PowerPAK® 1212-8W Dual	PowerPAK® 1212-8W Dual	AEC-Q101	572 pF	MOSFET (Metal Oxide)	60 V	8.8 nC	2 N-Channel (Dual)	6 A	27.8 W	Surface Mount Wettable Flank	2.5 V	-55 °C	175 ░C	36 mOhm	Automotive