Specification	FQD10N20CTM

Current - Continuous Drain (Id) @ 25°C	7.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	360 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQD10N20C Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK

Part	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQD10N20LTM	DPAK	2.5 W 51 W	20 V	2 V	200 V	17 nC	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	830 pF	7.6 A	Surface Mount	10 V	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	360 mOhm
ON Semiconductor FQD10N20CTM	TO-252AA		30 V	4 V	200 V	26 nC	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	510 pF	7.8 A	Surface Mount			DPAK (2 Leads + Tab) SC-63 TO-252-3		50 W	10 V	360 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQD10N20C Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.