FQD10N20C Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK

Part	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQD10N20LTM	DPAK	2.5 W 51 W	20 V	2 V	200 V	17 nC	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	830 pF	7.6 A	Surface Mount	10 V	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	360 mOhm
ON Semiconductor FQD10N20CTM	TO-252AA		30 V	4 V	200 V	26 nC	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	510 pF	7.8 A	Surface Mount			DPAK (2 Leads + Tab) SC-63 TO-252-3		50 W	10 V	360 mOhm

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK

Key Features

• 7.6A, 200V, RDS(on)= 360mΩ @VGS= 10 V, ID= 3.8A

• Low Gate Charge (Typ. 13nC)

• Low Crss( Typ. 14pF)

• 100% Avalanche Tested

• Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.