
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | PDTC123JT-QVL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 230 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.02 | |
| 30000 | $ 0.02 | |||
| 50000 | $ 0.01 | |||
| 100000 | $ 0.01 | |||
| 250000 | $ 0.01 | |||
Description
General part information
PDTC123 Series
100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Documents
Technical documentation and resources