Zenode.ai Logo
Beta
TO-236AB
Discrete Semiconductor Products

PDTC123JT-QVL

Active
Nexperia USA Inc.

TRANS PREBIAS NPN 50V TO236AB

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TO-236AB
Discrete Semiconductor Products

PDTC123JT-QVL

Active
Nexperia USA Inc.

TRANS PREBIAS NPN 50V TO236AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTC123JT-QVL
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition230 MHz
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
QualificationAEC-Q101
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)47 kOhms
Supplier Device PackageTO-236AB
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.02
30000$ 0.02
50000$ 0.01
100000$ 0.01
250000$ 0.01

Description

General part information

PDTC123 Series

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

Documents

Technical documentation and resources