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SOT883B
Discrete Semiconductor Products

PDTC123TMB,315

Active
Nexperia USA Inc.

NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = OPEN

SOT883B
Discrete Semiconductor Products

PDTC123TMB,315

Active
Nexperia USA Inc.

NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = OPEN

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTC123TMB,315
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Frequency - Transition230 MHz
GradeAutomotive
Mounting TypeSurface Mount
Package / Case3-XFDFN
Power - Max [Max]250 mW
QualificationAEC-Q100
Resistor - Base (R1)2.2 kOhm
Supplier Device PackageDFN1006B-3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.03
100000$ 0.03
250000$ 0.03

Description

General part information

PDTC123 Series

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.